发明名称 |
NPN bipolar transistors for radio frequency use |
摘要 |
A semiconductor component, in particular an NPN bipolar transistor, comprises an active surface region surrounded by thick field oxide and which is partly covered by an electrically isolating surface layer different from the field oxide. A base region within the active region is defined by a lithographically defined opening in the isolating layer. Also claimed are: (i) a process for manufacturing a transistor as above; (ii) a capacitor at the surface of a substrate comprising a dielectric layer over a highly doped buried region; (iii) a process of manufacturing the capacitor above; (iv) a process for producing a free area at a surface of a substrate which is limited by a nitride layer; (v) a side-string structure having conductive silicon contact a border of an active area; and (vi) an integrated circuit, bipolar device and process. |
申请公布号 |
SE522038(C2) |
申请公布日期 |
2004.01.07 |
申请号 |
SE19990001026 |
申请日期 |
1999.03.22 |
申请人 |
TELEFONAKTIEBOLAGET L M ERICSSON (PUBL) |
发明人 |
HANS NORSTROEM;STEFAN NYGREN;OLA TYLSTEDT |
分类号 |
H01L;H01L21/334;H01L27/01;H01L29/92;(IPC1-7):H01L29/92 |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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