发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for fabricating a semiconductor device is provided to improve the characteristic and reliability through a landing plug poly formation process by forming a sub pattern in the layout of a landing plug poly mask and by completely opening an active region in an etch process using the landing plug poly mask. CONSTITUTION: The sub pattern(500) is formed in the active region of the light interception region(300) of a landing plug poly mask for a bitline so that the contact area of the active region and the bitline is increased in a contact process.
申请公布号 KR20040002226(A) 申请公布日期 2004.01.07
申请号 KR20020037672 申请日期 2002.06.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HWANG, CHANG SEON;LEE, BYEONG CHEOL
分类号 H01L27/108;(IPC1-7):H01L27/108 主分类号 H01L27/108
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