发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to improve the characteristic and reliability through a landing plug poly formation process by forming a sub pattern in the layout of a landing plug poly mask and by completely opening an active region in an etch process using the landing plug poly mask. CONSTITUTION: The sub pattern(500) is formed in the active region of the light interception region(300) of a landing plug poly mask for a bitline so that the contact area of the active region and the bitline is increased in a contact process.
|
申请公布号 |
KR20040002226(A) |
申请公布日期 |
2004.01.07 |
申请号 |
KR20020037672 |
申请日期 |
2002.06.29 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
HWANG, CHANG SEON;LEE, BYEONG CHEOL |
分类号 |
H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|