| 摘要 |
PURPOSE: A dynamic random access memory(DRAM) cell is provided to prevent an active region from being damaged in a process for forming a contact hole for a metal interconnection in a peripheral area and avoid an increase of resistance during the process of forming a capacitor by forming a bitline on a semiconductor substrate and by sequentially forming a transistor, the capacitor and the metal interconnection over the bitline. CONSTITUTION: The bitline(41) is formed on the substrate(31) by interposing an insulation layer. A bitline contact plug(43) of a cylindrical type is formed on the bitline, having a width smaller than that of the bitline. An interlayer dielectric is formed on the front surface including bitline, protruding the bitline contact plug. A semiconductor layer is flatly formed on the protruded bitline contact plug and the interlayer dielectric, doped with impurity ions of a different conductivity type from that of the bitline contact plug. An isolation layer is formed in an isolation region of the semiconductor layer, defining the active region. The transistor includes the first and second impurity regions in the semiconductor layer of the active region. The first impurity region(57) is connected to the bitline contact plug. The capacitor(65) is formed on the transistor, insulated from the transistor and connected to the second impurity region.
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