| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent a channeling effect and a gate induced drain lowering(GIDL) current by performing a passivation process using deuterium with dissociated critical energy higher than that of hydrogen and by forming a barrier layer after the injection of the deuterium while using a nitride layer. CONSTITUTION: A gate electrode is formed on a semiconductor substrate(10). Inert ions are implanted into the front surface of the substrate in a direction vertical to the substrate. A deuterium ion implantation process is performed at a predetermined angle with the substrate so that ions are implanted into a region reserved for a lightly-doped-drain(LDD) region under the gate electrode. A nitride layer(70) is formed on the substrate by a predetermined thickness. Low density impurities are implanted into the substrate to form an LDD region. High density impurities are implanted into the substrate to form a source/drain region(90).
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