| 摘要 |
PURPOSE: A semiconductor device for restraining junction leakage and a manufacturing method therefor are provided to restrain junction leakage generated at edges of an active region and to improve sheet resistance. CONSTITUTION: A silicon substrate(10) is defined to an active and inactive region, and a trench is formed at the inactive region. A field insulating layer(12) is filled into the trench, wherein a top edge portion(12A) of the field insulating layer is protruded into the upper of the silicon substrate located edges of the active region. A source/drain region(20) is formed in the substrate. A metal silicide layer(22) is formed on the source/drain region except for the edges of the active region.
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