Field emission-type electron source and manufacturing method thereof

摘要

A field emission-type electron source (10) includes an insulative substrate (11) in the form of a glass substrate having an electroconductive layer (8) formed thereon. A low resistance semiconductor layer formed on the electroconductive layer. A strong electrical field drift layer (6) in the form of an oxidized porous polycrystalline silicon layer is formed over the electroconductive layer (8). This electroconductive layer (8) includes a lower electroconductive film (8a), made of copper and formed on the insulative substrate (11), and an upper electroconductive film (8b) made of aluminum and formed over the electroconductive film (8a). The strong electrical field drift layer (6) is formed by forming a polycrystalline silicon layer on the electroconductive layer (8), rendering the polycrystalline silicon layer to be porous and finally oxidizing it. The upper electroconductive film (8b) has a property that reacts easily with silicon and, therefore, formation of an amorphous layer which would occur during formation of the polycrystalline silicon layer can be suppressed.