MASK FOR LITHOGRAPHY, PREPARATION METHOD OF MASK, LITHOGRAPHY APPARATUS AND PREPARATION METHOD OF DEVICE

摘要

PURPOSE: A reflection mask, a method for preparing a device and a lithography projection apparatus are provided, to reduce the loss of contrast generated by the emission light which is firstly reflected by the dark part of a mask and is secondly reflected by other absorbing layer. CONSTITUTION: The reflection mask is provided with a relatively high reflectivity region and a relatively low reflectivity region, and defines a mask pattern having a minimum printing pitcher size, wherein the relatively low reflectivity region contains a layer of texture whose scale is smaller than that of the minimum printing pitcher size so as to reduce the regular reflection from the relatively low reflectivity region. Preferably the texture contains a phase diffraction grating.