| 摘要 |
<p>PURPOSE: A microelectronic device substrate, a method for forming a photoresist relief image, a photoresist composition and a product having a layer of the photoresist composition are provided, to obtain a novel photoresist which is suitable for short wavelength imaging at a wavelength less than 300 nm and less than 200 nm and to improve adhesion and resolution on a SiON layer and other inorganic substrates. CONSTITUTION: The photoresist composition comprises at least one photoacid generator; and a copolymer which has a fluorinated repeating unit, a photoacid-labile repeating unit and a repeating unit containing an adhesion-improving moiety. Preferably the copolymer is represented by the formula I or II, wherein Q is an optionally substituted alicyclic ring fused to the main chain of a polymer; X is a group containing at least one fluorine atom; Y is a group containing an adhesion-improving moiety; and Z is a photoacid-labile group. The microelectronic device substrate comprises a silicon oxynitride layer; and a photoresist composition coated layer which comprises at least one photoacid generator, and a polymer having at least one repeating unit containing an adhesion-improving moiety or a copolymer having a fluorinated repeating unit, a photoacid-labile repeating unit and a repeating unit containing an adhesion-improving moiety.</p> |
