| 摘要 |
PURPOSE: A method for fabricating an isolation layer of a semiconductor substrate is provided to improve the characteristic and reliability of the semiconductor substrate by forming the isolation layer while using two exposure masks for isolation. CONSTITUTION: A stack structure of a pad oxide layer and the first nitride layer is formed on the semiconductor substrate(11). The stack structure is separated from an isolation region by a predetermined distance to be patterned on the isolation region. The semiconductor substrate is etched to form a trench by a photolithography process using an isolation mask. The first oxide layer(21) is formed on the substrate. The second nitride layer(23) and the second oxide layer(25) are formed on the stack structure pattern including the trench. A buried oxide layer(27) is formed to fill the trench and is planarization-etched to expose the first nitride layer. The first nitride layer and the pad oxide layer are wet-etched to clean the surface of the substrate so that the isolation layer is formed.
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