METHOD FOR MANUFACTURING TUNGSTEN SILICIDE GATE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a tungsten silicide gate of a semiconductor device is provided to be capable of preventing the deterioration of a gate oxide layer due to the diffusion of fluorine. CONSTITUTION: A gate oxide layer(12) and a polysilicon layer(13) are sequentially formed at the upper portion of a silicon substrate(11). A WSix(x =2.2-2.4) layer(14) is formed at the upper portion of the polysilicon layer by carrying out a CVD(Chemical Vapor Deposition) process. A tungsten ion implantation is carried out at the WSix layer for transforming the WSix layer into a WSi2 layer. Preferably, an annealing process is carried out at the resultant structure for diffusing the implanted tungsten. Preferably, the tungsten ion implantation is carried out by using an energy of 10-300 keV.