METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of securing an open area at the inner portion of a contact hole when forming a metal pattern. CONSTITUTION: A gate oxide layer(21) and a gate pattern(22) are formed at the upper portion of a semiconductor substrate(20). The first and second spacer layers are formed at the upper portion of the resultant structure. The second spacer is formed by selectively etching the second spacer layer. After carrying out a predetermined ion implantation at the resultant structure, the second spacer is removed. An etching stop layer(25) and an insulating layer(26) are sequentially formed on the entire surface of the resultant structure. After forming a mask pattern at the upper portion of the insulating layer, a contact pattern(28) is formed at the resultant structure by carrying out an etching process.