| 摘要 |
PURPOSE: A method of forming PBN(Pyrolitic Boron Nitride) film by using the CVD(Chemical Vapor Deposition) is provided to define the range of reaction gas charge ratio, reaction temperature and reaction pressure of a carrier gas, which is enough for producing the PBN film, by an experiment. CONSTITUTION: In producing a PBN film in a CVD reaction chamber, BCl3, B2H6 or NH3 gas is used as the main reaction gas, and N2 or H2 gas is used as the carrier gas. In the process of producing the PBN film, the reaction temperature is set to 700 °C-2300 °C, and the reaction pressure of the carrier gas is set to 0.01 torr-20 torr.
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