| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent bird's beak by using two nitride layers. CONSTITUTION: An oxide layer(11) is formed on a silicon substrate(10) by surface oxidation processing. After forming the first nitride layer(12) on the oxide layer, the first nitride layer and the oxide layer are patterned by using a photoresist pattern. After removing the photoresist pattern, the second nitride layer is deposited on the resultant structure. A spacer(15) is formed at sidewalls of the first nitride and oxide pattern by etch-back of the second nitride layer. After etching the substrate, an isolation layer(17) is formed by LOCOS(LOCal Oxidation of Silicon) processing.
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