发明名称 PRE-SPUTTERING METHOD FOR IMPROVING UTILIZATION RATE OF SPUTTER TARGET
摘要 PURPOSE: A pre-sputtering method for improving utilization rate of a sputter target is provided to increase the utilization rate of the target. CONSTITUTION: A target is placed in a sputtering chamber(41), then plasma ions are introduced into the chamber and an electric potential gradient between the target and a base is formed by applying voltage to drive the plasma ions bombarding the target(42). During the bombardment, an elongated magnet is driven and scan reciprocately at a constant speed on the back side of the target(43) until impurities are removed from the target to complete the pre-sputter of the target(44).
申请公布号 KR20040002345(A) 申请公布日期 2004.01.07
申请号 KR20020055158 申请日期 2002.09.11
申请人 HANNSTAR DISPLAY CORP. 发明人 TENG TWN HO
分类号 C23C14/34;C23C14/35;H01J37/34;H01L21/203;(IPC1-7):H01L21/203 主分类号 C23C14/34
代理机构 代理人
主权项
地址