发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE
摘要 PURPOSE: A semiconductor light emitting device is provided to achieve white light of a high luminance, at a more inexpensive cost and to emit the light of broad wave length(from blue to orange). CONSTITUTION: A first light emitting structure comprises a barrier layer(105), a lower active layer(106), and another barrier layer(107). A second light emitting structure comprises the barrier layer, a middle active layer(108), and the other barrier layer(109). A third light emitting structure comprises the barrier layer, an upper active layer(110), and the barrier layer(111). The light emitting wavelength of respective light emitting structures is specified so as to be the shortest in the first light emitting structure and the longest in the third light emitting structure.
申请公布号 KR20040002471(A) 申请公布日期 2004.01.07
申请号 KR20030018788 申请日期 2003.03.26
申请人 NIPPON TELEGRAPH AND TELEPHONE CORP.(NT&T) 发明人 MATSUOKA TAKASHI;OKAMOTO HIROSHI
分类号 H01L27/15;H01L33/08;H01L33/32;(IPC1-7):H01L33/00 主分类号 H01L27/15
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