| 摘要 |
PURPOSE: A method for fabricating a complementary metal oxide semiconductor(CMOS) device is provided to improve production efficiency by decreasing the number of photo mask layers in a process for forming the CMOS device. CONSTITUTION: Well regions of the first and second conductivity types are formed in a semiconductor substrate(21), isolated from each other. Impurity ions for controlling a threshold voltage are simultaneously implanted into the surface of the well regions of the first and second conductivity types. The first photoresist pattern is formed on the well region of the second conductivity type. Impurity ions of the first conductivity type are implanted into the well region of the first conductivity type to control the threshold voltage. Gate electrodes(25a,25b) are formed on the well regions of the first and second conductivity types while low density impurity ions are implanted into the well region of the first and second conductivity types. The second photoresist pattern is formed on the well region of the first conductivity type. Low density impurity ions of the first conductivity type are implanted into the well region of the second conductivity type.
|
