| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor device is provided to be capable of increasing the degree of integration and improving the function of the semiconductor device by using Ru as the material for a metal line. CONSTITUTION: A lower conductive layer(12), a metal contact stop nitride layer(13), an interlayer dielectric(14), a metal stop nitride layer(15), and a passivation oxide layer(16) are sequentially formed at the upper portion of a semiconductor substrate(11). A damascene pattern made of a contact hole and a trench, is formed at the resultant structure. A Ru oxide layer(21) is formed along the surface of the resultant structure. Then, a Ru layer(22) is formed at the upper portion of the resultant structure for filling the damascene pattern enough. A Ru line is formed at the inner portion of the damascene pattern by etching the resultant structure until the passivation oxide layer is exposed.
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