| 摘要 |
PURPOSE: A method for manufacturing a capacitor is provided to be capable of achieving sufficient capacitance. CONSTITUTION: An interlayer dielectric(33) is formed on a semiconductor substrate(31). A storage node contact is formed to contact the substrate via the interlayer dielectric(33). A seed layer(37) and a sacrificial layer are sequentially formed on the interlayer dielectric. An opening part is formed to open the seed layer(37) by selectively etching the sacrificial layer. The first conductive layer is formed at inner walls of the opening part, and the second conductive layer is filled into the opening part. By annealing the resultant structure, a lower electrode(42a) having a concave and convex shape(41a) made of the first conductive layer is then formed. A dielectric film(43) and an upper electrode(44) are sequentially formed on the lower electrode.
|
