发明名称 RAPID THERMAL PROCESSING EQUIPMENT
摘要 PURPOSE: An RTP(Rapid Thermal Processing) equipment is provided to be capable of obtaining uniform temperature distribution total areas of wafer. CONSTITUTION: An RTP equipment comprises a chamber wall(100), the first susceptor(110), the second susceptor(130), an energy dispersion plate(140), and ramps(150). The first susceptor(110) is formed at inner side of the chamber wall(100) for supporting a wafer(120). The second susceptor(130) is formed on the upper of the first susceptor. The energy dispersion plate(140) is formed on the second susceptor. The ramps(150) are formed on the front surface and the rear surface, respectively for rising the temperature of the wafer.
申请公布号 KR20040001863(A) 申请公布日期 2004.01.07
申请号 KR20020037197 申请日期 2002.06.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, YU BAE
分类号 H01L21/324;(IPC1-7):H01L21/324 主分类号 H01L21/324
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