| 摘要 |
PURPOSE: A method for forming a capacitor is provided to be capable of increasing capacitance and reducing leakage current. CONSTITUTION: A semiconductor substrate is loaded in a chamber. At this time, the semiconductor substrate includes a storage node and a dielectric layer. A TiN layer for an electrode, is deposited at the upper portion of the dielectric layer by supplying TiCl4 and NH3 gas into the chamber. A post-process is carried out at the resultant structure by supplying NH3 gas into the chamber. A pumping process is carried out for exhausting residual gas from the chamber. Preferably, the TiN layer is formed by carrying out a three-step depositing process. Preferably, the TiN layer is capable of being formed by carrying out a six-step depositing process. Preferably, the TiN layer depositing process is carried out at the temperature of 550-680 °C.
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