| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to be capable of preventing the generation of moat. CONSTITUTION: A pad oxide layer(200b), a nitride layer(300b), and a BARC(Bottom Anti-Reflective Coating)/PR(PhotoResist) layer are sequentially formed at the upper portion of a semiconductor substrate(100). A BARC/PR pattern(400b) is formed by selectively removing the BARC/PR layer. An etching process is carried out at the nitride layer and the pad oxide layer by using the BARC/PR pattern as an etching mask for exposing the semiconductor substrate. The first tilted portion is formed by partially removing the exposed substrate. A trench(500) having a double tilt, is formed by selectively removing the substrate. After carrying out a post-process at the trench, the BARC/PR pattern is partially removed.
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