| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to be capable of improving the corner rounding state of a trench for preventing moat phenomenon. CONSTITUTION: A pad oxide layer(200d) and a nitride layer(300b) are sequentially formed at the upper portion of a semiconductor substrate(100). The nitride layer and the pad oxide layer are selectively removed for exposing the upper surface of the substrate. The nitride layer is partially removed by carrying out a wet etching process using phosphoric acid for selectively exposing the pad oxide layer. A trench(400) is formed by selectively removing the substrate using activated plasma, while roundly forming the exposed pad oxide layer.
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