发明名称 METHOD FOR INSPECTING DEFECT OF PLATE TYPE WAFER USING LASER MARKING PROCESS
摘要 PURPOSE: A method for inspecting the defect of a plate type wafer using a laser marking process is provided to be capable of reducing the fabrication cost and time of the wafer and removing noise for improving sensitivity by assigning coordinates to the defects of the wafer. CONSTITUTION: More than two marks are formed on the surface of a plate type wafer(10) by carrying out a laser marking process using an SEM(Scanning Electron Microscope). A wafer scanning process is carried out by using an inspection tool located at the process line. The wafer is transferred to a predetermined equipment connected with the inspection tool. At this time, the scanning result is also transmitted to the predetermined equipment. After aligning the wafer by using the laser marking portion, defect coordinates are checked.
申请公布号 KR20040001531(A) 申请公布日期 2004.01.07
申请号 KR20020036763 申请日期 2002.06.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, DEOK WON;LEE, SE YEONG
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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