| 摘要 |
PURPOSE: A method for forming a metal line is provided to be capable of preventing top notch of a hard mask and restraining the loss of a nitride layer of the hard mask. CONSTITUTION: After sequentially forming an adhesive layer(2) and a tungsten layer(3) at the upper portion of a lower oxide layer(1), a lower hard mask(4) and an upper hard mask are formed at the upper portion of the resultant structure. After coating a photoresist layer on the entire surface of the upper hard mask, a photoresist pattern is formed by selectively etching the photoresist layer for forming a bit line. After sequentially etching the upper and lower hard mask by using the photoresist pattern for exposing the tungsten layer, the tungsten layer is selectively etched by using the upper hard mask for exposing the adhesive layer. The adhesive layer is then selectively etched for exposing the lower oxide layer. At this time, the upper hard mask is simultaneously etched.
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