| 摘要 |
PURPOSE: A method for forming a storage node of a semiconductor device is provided to be capable of securing cell capacitance value enough by improving the structure of a storage node. CONSTITUTION: After sequentially depositing a pad oxide layer and a pad nitride layer at the upper portion of a silicon substrate(10), an isolation trench and a storage node trench are formed at the inner portion of the silicon substrate by carrying out an exposing and etching process. After selectively forming a photoresist pattern at the upper portion of the resultant structure for covering the storage node trench, the isolation trench is further etched by using the photoresist pattern as an etching mask. After removing the photoresist pattern, a gap-fill oxide layer is deposited on the entire surface of the resultant structure. After carrying out a CMP(Chemical Mechanical Polishing) process at the resultant structure, the gap-fill oxide layer of the storage node trench is removed by a wet etching process. Then, a storage node(60) is formed at the resultant structure by depositing polysilicon on the entire surface of the resultant structure.
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