| 摘要 |
PURPOSE: A CMP(Chemical Mechanical Polishing) method using a dual-structure platen is provided to be capable of uniformly carrying out a CMP process at the entire surface of a wafer. CONSTITUTION: After fixing a wafer having a polish object layer to a head, the head is located at the upper portion of a platen(20). At this time, a polishing pad is installed at the upper portion of the platen. Then, a CMP process is carried out at the polish object layer by simultaneously rotating the platen and the head while jetting predetermined slurry. Preferably, the platen includes a center platen(22) and an edge platen(21) for enclosing the center platen. At this time, each rotation speed of the center and edge platen, is differently controlled.
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