| 摘要 |
PURPOSE: A method for manufacturing a phase shift mask is provided to be capable of simplifying manufacturing processes and reducing manufacturing costs. CONSTITUTION: A phase shifting layer(210) and a chrome film are sequentially stacked on a quartz substrate(200). A chrome pattern(220) is formed by performing the first patterning using the first photoresist pattern as a mask, and the second photoresist pattern is formed by writing electron beam to the first photoresist pattern and developing. A residue chrome film existing at a phase shifting region is removed by performing the second patterning using the second photoresist pattern. At this time, the residue chrome film is etched and cleaned by spraying chrome etching solutions.
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