METHOD OF REMOVING POLYMER OCCURRED IN ETCHING PROCESS

摘要

PURPOSE: A method is provided to effectively removing polymer produced after etching process of a metallic layer. CONSTITUTION: In the first ashing process, a predetermined amount of NF3 gas plasma is applied to remove the polymer remaining on a metallic layer of silicon substrate(200). The polymer is further removed by a predetermined amount of O2 gas plasma in the second ashing process(300). Through the ashing process, the polymer is removed from organic strips(400). In the first ashing process, 35 sccm of NF3 gas is applied for 30 seconds.