METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to highly integrate the semiconductor device by forming a sacrificial insulation layer of a boron phosphorous silicate glass(BPSG) layer and a tetraethoxysilane(TEOS) layer and by forming a capacitor having capacitance enough for high integration by a difference of etch selectivity. CONSTITUTION: An etch barrier layer(33) is formed on a conductive layer(31) for a storage node connected to a semiconductor substrate. The sacrificial insulation layer is formed on the etch barrier layer, having a stack structure of the first and second sacrificial insulation layer. A polysilicon layer as a hard mask layer is formed on the sacrificial insulation layer. The hard mask layer, the sacrificial insulation layer and the etch barrier layer are sequentially dry-etched to form a plurality of holes exposing the conductive layer for the storage node. The first sacrificial insulation layer is wet-etched to increase the critical dimension of the lower portion of the hole.