| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to be capable of preventing boron ions of a P-well region from diffusing into the isolation layer by using a silicon germanium layer. CONSTITUTION: After sequentially forming a pad oxide layer(104) and a pad nitride layer(106) at the upper portion of a semiconductor substrate(102), a trench is formed by sequentially etching the pad nitride layer, the pad oxide layer, and the semiconductor substrate. After forming a germanium growth layer at the inner portion of the trench, the germanium growth layer is transformed into a silicon germanium layer(112) by carrying out a rounding oxidation process. Then, an isolation layer is formed at the inner portion of the trench.
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