METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of improving reliability by forming a nitride layer on a capacitor insulating layer. CONSTITUTION: A lower electrode(24) is formed on a substrate(20) having a contact plug(23). A capacitor insulating layer(25) is formed on the resultant structure. The capacitor insulating layer(25) is planarized to expose the lower electrode(24). A nitride layer(26) is formed on the capacitor insulating layer by plasma activation energy using NH3 or N2 gas. A dielectric film(27) is formed on the lower electrode. An upper electrode(28) is formed on the dielectric film.