| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing attacks of a lower layer due to wet-etching when storage node contact processing. CONSTITUTION: After forming the first insulating layer(12) on a substrate(10), an attack protection layer(30) is formed on the first insulating layer(12). A plug(15) is formed to contact the substrate via the attack protection layer(30) and the first insulating layer. After forming the second insulating layer(16) on the resultant structure, conductive patterns(20,21) are formed to contact the plug via the second insulating layer. A contact hole(23) is then formed to expose the plug by selectively etching the second insulating layer(16).
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