METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH METAL GATE ELECTRODE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing the oxidation of gate metal and the attack of oxygen into the interface between gate metal and gate polysilicon during reoxidation processing. CONSTITUTION: A gate oxide layer(22) is formed on a semiconductor substrate(21). A polysilicon layer(23) is formed on the gate oxide layer. A metal film(25) is formed on the polysilicon layer. A gate pattern is formed by sequentially patterning the metal film and the polysilicon layer. Then, an oxide layer(28) is formed on the entire surface of the resultant structure by selective reoxidation processing.