| 摘要 |
PURPOSE: A forming method of a ruthenium film and a manufacturing method of a capacitor using the same are provided to be capable of preventing impurities while restraining agglomeration of metal. CONSTITUTION: A ruthenium film is deposited on a semiconductor substrate(11). The ruthenium film is treated by plasma in atmosphere including at least NH3 gas(12). The plasma-treated ruthenium film is then annealed(13). In the plasma treatment, mixed gases of NH3 and inert gas are used as the atmosphere gas. The flow rate of the atmosphere gas is 1-100 sccm.
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