| 摘要 |
PURPOSE: A method for forming a capacitor is provided to prevent the leakage current and deterioration characteristic of the capacitor, and secure capacitance. CONSTITUTION: An interlayer dielectric(3) having a conductive plug(5), is formed at the upper portion of a semiconductor substrate(1). After forming a polycrystalline silicon layer on the entire surface of the resultant structure by carrying out an LPCVD(Low Pressure Chemical Vapor Deposition) process, a cylinder type storage node(10) is formed by selectively etching the polycrystalline silicon layer. A Ti1-x-Alx-OyNz(0.01 <=x <= 0.5, 2 <=y <=2.5, 0.01 <=z <=0.1) dielectric layer(13) is deposited on the entire surface of the resultant structure by carrying out the LPCVD process using metal-organic compound as a precursor. A conductive layer(15) for a plate electrode, is formed at the upper portion of the Ti1-x-Alx-OyNz dielectric layer.
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