METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to prevent exposure of the divot occurring in the process of shallow trench isolation. CONSTITUTION: A sacrifice layer pattern is formed onto the active region of a semiconductor substrate(10) in order to expose isolation regions. Through an etching process, a trench(15) is formed in the isolation region with a desired depth, by using the sacrifice layer pattern as a mask. After an isolation layer(17) is deposited onto the trench(15), the sacrifice layer pattern is removed and a spacer(30) is formed at the side wall of the trench isolation layer(17) in order to cover a divot(21). The spacer(30) includes a nitride layer(31) formed on the trench isolation layer(17) and an oxide layer(33) formed over the nitride layer(31).