METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING SALICIDE FORMATION PROCESS

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to obtain enough space for forming a contact with maintaining a designated channel length by a salicide forming process, and to prevent deterioration of transistor characteristics by performing the annealing process before a source/drain formation process. CONSTITUTION: A plurality of gate electrodes(12) are formed on a semiconductor substrate(10) in which a salicide forming region and a non-salicide forming region are defined. After an LDD(Lightly Doped Drain) region is formed, the first spacer(16) is formed at the side wall of the gate electrode(12). A salicide barrier layer(18) is formed over the first spacer and the gate electrode. The second spacer is formed on the side wall of the first spacer(16) by etching the salicide barrier layer(18) exposed by way of a photolithography method. After source/drain regions(14a,22) is formed by an ion implantation process, a salicide(24) is formed on the source/drain regions and/or the gate electrode, which is located in the salicide forming region. The salicide(24) is formed out of silicide by way of a self-aligning method.