| 摘要 |
PURPOSE: A method for manufacturing an isolation layer of a semiconductor device is provided to be capable of restraining moat phenomenon from happening to the upper edge portion of a trench by using a high density oxide layer. CONSTITUTION: After sequentially depositing a pad oxide layer(103) and a pad nitride layer(105) at the upper portion of a silicon substrate(100), a trench(106) is formed by selectively etching the resultant structure using a photolithography process. A sacrificial oxide layer(108) is formed at the inner portion of the trench. An amorphous silicon layer is formed on the entire surface of the resultant structure. Then, the amorphous silicon layer is transformed into a high density oxide layer(120) by carrying out a heat treatment at the resultant structure.
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