| 摘要 |
The subject that should be solved in the present invention is to improve throughput of electron beam lithography apparatus or electron beam lithography system and lithography method used therefor. The electron beam lithography apparatus by the present invention comprises a lithography data generation part, an exposure map implementation part, and plurality of lithography data generation parts, thereby several exposure maps which are different in condition and type, are implemented in parallel. Moreover, the electron beam lithography apparatus by present invention has a construction to compare outputs from the lithography data generation parts. Moreover, the electron beam lithography system by present invention has a construction to use lithography data formed with the lithography data generation parts of one of the electron beam lithography apparatuses with other of the electron beam lithography apparatuses.
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