| 摘要 |
A GaN-based semiconductor device made of GaN-based semiconductor materials includes a bank made of a first undoped material and formed on a base layer, a thin layer made of a second undoped material having higher band-gap energy than the first undoped material and formed on a side wall surface of the bank, the thin layer having a heterojunction with the first undoped material, a source electrode formed on the bank so as to extend beyond the heterojunction between the bank and the thin layer, and a drain electrode formed on the reverse surface of the base layer, wherein a two-dimensional electron gas layer is formed between the source and drain electrodes in parallel with the heterojunction.
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