发明名称 |
Method for improving the reliability of flash memories |
摘要 |
A method for reducing random bit failures of flash memory fabrication processes with an HTO film. The random bit failures are caused by HF acid penetration. The HTO film, which functions as an interface reinforcement layer, is formed on a sacrificial layer and a PL1 layer. With the aid of the HTO film, the flash memory is free of acid-corroded seams.
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申请公布号 |
US6673720(B2) |
申请公布日期 |
2004.01.06 |
申请号 |
US20020683850 |
申请日期 |
2002.02.22 |
申请人 |
MACRONIX INTERNATIONAL CO. LTD. |
发明人 |
HUANG WENG-HSING;CHANG KENT KUOHUA |
分类号 |
H01L21/8247;H01L27/115;(IPC1-7):H01L21/211 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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