发明名称 |
Semiconductor integrated circuit |
摘要 |
A semiconductor integrated circuit includes: a logic circuit section including transistors formed on an SOI substrate; and a partially-depletion-type transistor, which is formed on the SOI substrate as a switching transistor for controlling ON/OFF states of the logic circuit section and which has a body contact portion. The partially-depletion-type transistor has a threshold voltage, which is substantially equal to that of the transistors in the logic circuit section when no potential is applied to the body contact portion and which is higher than that of the transistors in the logic circuit section when a potential is applied to the body contact portion.
|
申请公布号 |
US6674127(B2) |
申请公布日期 |
2004.01.06 |
申请号 |
US20010840882 |
申请日期 |
2001.04.25 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KOTANI NAOKI |
分类号 |
H01L27/08;H01L21/8238;H01L27/092;H01L27/12;H01L29/10;H01L29/786;H03K19/00;(IPC1-7):H01L27/01 |
主分类号 |
H01L27/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|