发明名称 Semiconductor integrated circuit
摘要 A semiconductor integrated circuit includes: a logic circuit section including transistors formed on an SOI substrate; and a partially-depletion-type transistor, which is formed on the SOI substrate as a switching transistor for controlling ON/OFF states of the logic circuit section and which has a body contact portion. The partially-depletion-type transistor has a threshold voltage, which is substantially equal to that of the transistors in the logic circuit section when no potential is applied to the body contact portion and which is higher than that of the transistors in the logic circuit section when a potential is applied to the body contact portion.
申请公布号 US6674127(B2) 申请公布日期 2004.01.06
申请号 US20010840882 申请日期 2001.04.25
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KOTANI NAOKI
分类号 H01L27/08;H01L21/8238;H01L27/092;H01L27/12;H01L29/10;H01L29/786;H03K19/00;(IPC1-7):H01L27/01 主分类号 H01L27/08
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