发明名称 |
Sti pull-down to control SiGe facet growth |
摘要 |
A SiGe bipolar transistor including a semiconductor substrate having a collector and sub-collector region formed therein, wherein the collector and sub-collector are formed between isolation regions that are also present in the substrate is provided. Each isolation region includes a recessed surface and a non-recessed surface which are formed utilizing lithography and etching. A SiGe layer is formed on the substrate as well as the recessed non-recessed surfaces of each isolation region, the SiGe layer includes polycrystalline Si regions and a SiGe base region. A patterned insulator layer is formed on the SiGe base region; and an emitter is formed on the patterned insulator layer and in contact with the SiGe base region through an emitter window opening.
|
申请公布号 |
US6674102(B2) |
申请公布日期 |
2004.01.06 |
申请号 |
US20010769640 |
申请日期 |
2001.01.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COOLBAUGH DOUGLAS DUANE;DUPUIS MARK D.;GALLAGHER MATTHEW D.;GEISS PETER J.;PHILIPS BRETT A. |
分类号 |
H01L29/73;H01L21/20;H01L21/331;H01L29/732;H01L29/737;(IPC1-7):H01L29/737 |
主分类号 |
H01L29/73 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|