发明名称 |
Use of high-k dielectric materials in modified ONO structure for semiconductor devices |
摘要 |
A process for fabrication of a semiconductor device including a modified ONO structure, including forming the modified ONO structure by providing a semiconductor substrate; forming a first oxide layer on the semiconductor substrate; depositing a layer comprising a high-K dielectric material on the first oxide layer; and forming a top oxide layer on the layer comprising a high-K dielectric material. The semiconductor device may be, e.g., a MIRRORBIT(TM) two-bit EEPROM device or a floating gate flash device including a modified ONO structure.
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申请公布号 |
US6674138(B1) |
申请公布日期 |
2004.01.06 |
申请号 |
US20010036757 |
申请日期 |
2001.12.31 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
HALLIYAL ARVIND;RAMSBEY MARK T.;CHANG KUO-TUNG;TRIPSAS NICHOLAS H.;OGLE ROBERT B. |
分类号 |
H01L21/28;H01L21/336;H01L29/51;H01L29/792;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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