发明名称 Compound semiconductor surface stabilizing method, semiconductor laser device fabricating method using the stabilizing method, and semiconductor device
摘要 In a compound semiconductor surface stabilizing method, a compound semiconductor is immersed in a solution containing sulfur ions, and then, the compound semiconductor is immersed in a solution containing cations, which react with sulfur to form a sulfide. These immersing steps form a sulfur layer and a sulfide layer in this order on a surface of the compound semiconductor.
申请公布号 US6674095(B1) 申请公布日期 2004.01.06
申请号 US20000584380 申请日期 2000.05.31
申请人 SHARP KABUSHIKI KAISHA 发明人 WATANABE MASANORI
分类号 H01S5/028;(IPC1-7):H01L29/227 主分类号 H01S5/028
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