发明名称 Evaluation mask, focus measuring method and aberration measuring method
摘要 An evaluation mask for evaluating a projection-type exposure apparatus, the mask including at least one diffraction grating pattern for producing a diffracted light of the positive first-order and a diffracted light of negative first-order, diffraction efficiencies of the diffracted lights being different respectively, one of the diffracted lights having a magnitude that is zero, and an image of the at least one diffraction grating pattern being projected onto a test substrate by the projection-type exposure apparatus, and a reference pattern for obtaining a reference image to measure a displacement of the image of the diffraction grating pattern, and an image of the reference pattern being projected onto the test substrate or the image detector by the projection-type exposure apparatus, wherein the images of the diffraction grating pattern and the reference pattern projected onto the test substrate or the image detector are used for evaluating the projection-type exposure apparatus.
申请公布号 US6674511(B2) 申请公布日期 2004.01.06
申请号 US20010923443 申请日期 2001.08.08
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NOMURA HIROSHI;KONOMI KENJI
分类号 G01B11/00;G01M11/02;G03F1/08;G03F1/44;G03F7/20;G03F7/207;H01L21/027;(IPC1-7):G03B27/52;G03B27/68;G03B27/54;G03F00/09 主分类号 G01B11/00
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