发明名称 |
Method and apparatus for a monolithic integrated mesfet and p-i-n optical receiver |
摘要 |
Disclosed is a semiconductor structure and manufacturing process for making an integrated FET and photodetector optical receiver on a semiconductor substrate. A FET is formed by forming at least one p channel in a p-well of the substrate and forming at least one n channel in the p-well of the substrate. A p-i-n photodetector is formed in the substrate by forming at least one p channel in an absorption region of the substrate when forming the at least one p channel in the p well of the FET and forming at least one n channel in the absorption region of the substrate when forming the at least one n channel in the p-well of the FET.
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申请公布号 |
US6673645(B2) |
申请公布日期 |
2004.01.06 |
申请号 |
US20020142093 |
申请日期 |
2002.05.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HEINEKE RANDOLPH B.;HOGAN WILLIAM K.;OLSON SCOTT ALLEN;SCHOW CLINT LEE |
分类号 |
H01L21/00;H01L21/336;H01L27/144;H01L31/0352;H01L31/075;H01L31/105;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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