| 摘要 |
Disclosed is a semiconductor device in which first and second MISFETs are formed, each of the first and second MISFETs including a source region, a drain region, a gate insulating film, a gate electrode and a covering insulating film. The source region and the drain regions are formed apart from each other within a semiconductor substrate. The gate insulating film is formed on the surface of the semiconductor substrate and positioned between the source region and the drain region, and the gate electrode is formed on the gate insulating film. The covering insulating film is formed to cover the side surface of the gate electrode, the gate insulating film and a part of the source region or the drain region. The first and second MISFETs differ from each other in the thickness of a first region of the covering insulating film positioned to cover the source region or the drain region.
|
