发明名称 Method and apparatus for processing substrates in a system having high and low pressure areas
摘要 A positive pressure gradient is maintained across an open access port of an interface chamber such as a load lock chamber which provides an interface between a low pressure chamber such as a transfer or buffer chamber, and a high pressure area such as a staging area or factory interface area. When the access port of the interface chamber is open to the high-pressure area, the positive pressure gradient may be used in some applications to inhibit the flow of gasses from the high-pressure area into the interior of the interface chamber.
申请公布号 US6672864(B2) 申请公布日期 2004.01.06
申请号 US20020229879 申请日期 2002.08.27
申请人 APPLIED MATERIALS, INC. 发明人 WANG HOUGONG;XU ZHENG;NGAN KENNY KING-TAI
分类号 H01L21/00;H01L21/677;(IPC1-7):F27D3/16 主分类号 H01L21/00
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