发明名称 |
Method and apparatus for processing substrates in a system having high and low pressure areas |
摘要 |
A positive pressure gradient is maintained across an open access port of an interface chamber such as a load lock chamber which provides an interface between a low pressure chamber such as a transfer or buffer chamber, and a high pressure area such as a staging area or factory interface area. When the access port of the interface chamber is open to the high-pressure area, the positive pressure gradient may be used in some applications to inhibit the flow of gasses from the high-pressure area into the interior of the interface chamber.
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申请公布号 |
US6672864(B2) |
申请公布日期 |
2004.01.06 |
申请号 |
US20020229879 |
申请日期 |
2002.08.27 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WANG HOUGONG;XU ZHENG;NGAN KENNY KING-TAI |
分类号 |
H01L21/00;H01L21/677;(IPC1-7):F27D3/16 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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