发明名称 |
Contact structure for an electric II/VI semiconductor component and a method for the production of the same |
摘要 |
A process for the production of contacts for electrically operated II/VI semiconductor structures (for example laser diodes). The contact materials palladium and gold hitherto used in relation to electrically operated II/VI semiconductor lasers are distinguished by a relatively great, not purely ohmic specific contact resistance in relation to the II/VI cover layer. The consequentially necessary higher operating voltages result in the unnecessary generation of heat and thus substantially accelerate degradation of the entire laser structure. That effect causes a limitation in terms of the service life of II/VI semiconductor laser diodes. The invention permits the operation of semiconductor laser diodes with lower operating voltages. The II/VI semiconductor laser diodes produced with our invention are distinguished by a longer service life. That permits inter alia commercial use of semiconductor laser diodes in the blue-green spectral range.
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申请公布号 |
US6673641(B1) |
申请公布日期 |
2004.01.06 |
申请号 |
US20020111661 |
申请日期 |
2002.04.24 |
申请人 |
TECHNISCHE UNIVERSITAET BERLIN |
发明人 |
STRASSBURG MATTHIAS;SCHULZ OLIVER;POHL UDO W.;BIMBERG DIETER |
分类号 |
H01L21/443;H01L33/28;H01L33/40;H01S5/042;H01S5/327;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/443 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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